A Single Chip Packaged MEMS G Sensor for Industrial Applications

Development of a single chip packaged MEMS G sensor for industrial applications is discussed. The developed G sensor is composed of a MEMS sensing element and a signal processing ASIC. The MEMS sensing element is fabricated by using the unique sacrificial/bulk micromachining (SBM) process for better mechanical properties. And the signal processing ASIC is fabricated in 0.5um CMOS process technology and operated with +5Vdc single power supply. The ASIC also has features of over/reverse voltage protection, ESD protection, self-test, and temperature sensor. To ensure high reliability in industrial environment, Low Temperature Co-fired Ceramic (LTCC) packaging is performed. The packaged chip is Land Grid Array (LGA) type which has 18 I/O pads, and the outline dimensions are 9.7mm x 8mm x 1.9mm. The developed G sensor offers analog voltage output with ±2g dynamic range, 0.962mG bias instability, and 76dB SNR.